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Showing posts with the label Construction-of-silicon-control-rectifier (SCR)

Construction of silicon control rectifier (SCR)

 SCR- silicon control rectifier Construction 1. Anode and cathode region are highly drop where gate as moderately drop and drift layer are lightly drop. 2. SCR can be visualized as too BJT (PNP) and ( n p n) connected together 3. SCR is the minority carrier device and it has three p n junction . Disadvantage of SCR 1. Switching is very least while T-off highest  2. More switching loss 3. More conductivity modulation , least R-oN  4. Minimum oN state drop and minimum conductivity loss  # SCR contains three p n junction J1 anode and drift - anode is highly drop , depletion low J2 drift and gate - lightly drop , depletion low J3 gate and cathode - highly drop , depletion low Since there is light dropping on both side of J2  So breakdown voltage is high for junction J2  Reverse blocking Let ,            Anode is connected to negative terminal of supply which cathode is connected to positive terminal of supply  1. J1 and J2 rev...